ACST10 查看數據表（PDF） - STMicroelectronics
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ACST10 Datasheet PDF : 12 Pages
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Characteristics
1
Characteristics
ACST10
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
Value
Unit
IT(RMS) On-state rms current (full sine wave)
TO-220AB
TO-220FPAB
ITSM
I2t
Non repetitive surge peak on-state current
Tj initial = 25 °C, ( full cycle sine wave)
I2t for fuse selection
F = 60 Hz
F = 50 Hz
dI/dt
VPP
PG(AV)
PGM
IGM
Tstg
Tj
Critical rate of rise on-state current
IG = 2 x IGT, (tr ≤ 100 ns)
Non repetitive line peak pulse voltage (1)
Average gate power dissipation
Peak gate power dissipation (tp = 20 µs)
Peak gate current (tp = 20 µs)
Storage temperature range
Operating junction temperature range
F = 120 Hz
1. According to test described in IEC 61000-4-5 standard and Figure 17
Tc = 105 °C
Tamb = 84 °C
tp = 16.7 ms
tp = 20 ms
tp = 10 ms
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
10
A
105
100
66
100
2
0.1
10
1
-40 to +150
-40 to +125
A
A
A2s
A/µs
kV
W
W
A
°C
°C
Table 3. Electrical characteristics
Symbol
Test conditions
Quadrant
Tj
IGT(1) VOUT = 12 V, RL = 33 Ω I - II - III
VGT VOUT = 12 V, RL = 33 Ω I - II - III
VGD
IH(2)
VOUT = VDRM, RL = 3.3 Ω I - II - III
IOUT = 500 mA
IL
IG = 1.2 x IGT
I - II - III
dV/dt(2) VOUT = 67 % VDRM, gate open
(dV/dt)c = 15 V/µs
(dI/dt)c(2)
Without snubber
VCL ICL = 0.1 mA, tp = 1 ms
1. Minimum IGT is guaranteed at 5% of IGT max
2. For both polarities of OUT pin referenced to COM pin
25 °C
25 °C
125 °C
25 °C
25 °C
125 °C
125 °C
25 °C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
MIN.
Value
ACST10-7Sx ACST10-7Cx
10
35
1.0
0.2
30
50
50
70
200
2000
4.4
12
850
Unit
mA
V
V
mA
mA
V/µs
A/ms
V
2/12
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