12N60C3D 查看數據表（PDF） - Fairchild Semiconductor
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12N60C3D
Fairchild Semiconductor
12N60C3D Datasheet PDF : 8 Pages
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HGTP12N60C3D, HGT1S12N60C3DS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Diode Reverse Recovery Time
Thermal Resistance
trr
RθJC
IEC = 12A, dIEC/dt = 200A/µs
IEC = 1.0A, dIEC/dt = 200A/µs
IGBT
Diode
-
32
40
ns
-
23
30
ns
-
-
1.2
oC/W
-
-
1.9
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending
at the point where the collector current equals zero (ICE = 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
losses due to diode recovery.
Typical Performance Curves
80
DUTY CYCLE <0.5%, VCE = 10V
70 PULSE DURATION = 250µs
60
50
TC = 150oC
40
TC = 25oC
30
TC = -40oC
20
10
0
4
6
8
10
12
14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
80
VGE = 15.0V
70
12.0V
60
50
10.0V
40
30
20
10
0
0
9.0V
8.5V
8.0V
7.5V
7.0V
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
80
PULSE DURATION = 250µs
70 DUTY CYCLE <0.5%, VGE = 10V
60
50
40
TC = -40oC
30
TC = 150oC
20
TC = 25oC
10
0
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
80
PULSE DURATION = 250µs
70 DUTY CYCLE <0.5%, VGE = 15V
TC = -40oC
60
50
TC = 25oC
40
TC = 150oC
30
20
10
0
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
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