ADM1051 查看數據表（PDF） - Analog Devices

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ADM1051

Precision Dual Voltage Regulator Controllers

Analog Devices 

ADM1051/ADM1051A

ABSOLUTE MAXIMUM RATINGS*

(TA = 25°C unless otherwise noted)

VCC to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 V

SHDN1, SHDN2 to GND . . . . . . . . –0.3 V to (VCC + 0.3 V)

SENSE 1, SENSE 2 to GND . . . . . . . . . . . –0.3 V to +5.5 V

FORCE 1, FORCE 2 . . . . . . . Short-Circuit to GND or VCC

Continuous Power Dissipation (TA = 70°C) . . . . . . . 650 mW

8-Lead SOIC (Derate 8.3 mW/°C Above 70°C)

Operating Temperature Range

Commercial (J Version) . . . . . . . . . . . . . . . . . . 0°C to 70°C

Storage Temperature Range . . . . . . . . . . . –65°C to +150°C

Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . 300°C

*This is a stress rating only; functional operation of the device at these or any other

conditions above those indicated in the operation sections of this specification is

not implied. Exposure to absolute maximum rating conditions for extended

periods of time may affect reliability.

THERMAL CHARACTERISTICS

8-Lead Small Outline Package:

θJA = 150°C/W

ORDERING GUIDE

Model

ADM1051JR

ADM1051AJR

Temperature

Range

0°C to 70°C

0°C to 70°C

Package

Description

8-Lead SOIC

8-Lead SOIC

Package

Option

R-8

R-8

PIN FUNCTION DESCRIPTIONS

Pin

No. Mnemonic Function

1 FORCE 2 Output of Channel 2 control amplifier

to gate of external N-channel MOSFET.

2 SENSE 2 Input from source of external MOSFET

to inverting input of Channel 2 control

amplifier, via output voltage-setting

feedback resistor network.

3 SHDN2 Digital Input. Active-low shutdown

control with 50 µA internal pull-up. The

output of Channel 2 control amplifier goes

to ground when SHDN2 is taken low.

4 GND

5 SHDN1

Device Ground Pin.

Digital Input. Active-low shutdown con-

trol with 50 µA internal pull-up. See text for

more details of SHDN1 functionality.

6 SENSE 1 Input from source of external MOSFET to

inverting input of Channel 1 control ampli-

fier, via output voltage-setting feedback

resistor network.

7 FORCE 1 Output of Channel 1 control amplifier to

gate of external N-channel MOSFET.

8

VCC

12 V Supply.

12V

VCC

VIN

1␮F

3.3V

PHD55N03LT

FORCE 1

100␮F

LEAVE OPEN OR

CONNECT TO

LOGIC SIGNALS

IF SHUTDOWN

REQUIRED

SHDN1

SHDN2

ADM1051/

ADM1051A

SENSE 1

VIN

3.3V

MTD3055VL

FORCE 2

VOUT1

2؋100␮F

100␮F

SENSE 2

VOUT2

2؋100␮F

Figure 1. Test Circuit

PIN CONFIGURATION

FORCE 2 1

8 VCC

SENSE 2 2 ADM1051/ 7 FORCE 1

ADM1051A

SHDN2 3 TOP VIEW 6 SENSE 1

GND 4 (Not to Scale) 5 SHDN1

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the ADM1051/ADM1051A features proprietary ESD protection circuitry, permanent

damage may occur on devices subjected to high-energy electrostatic discharges. Therefore,

proper ESD precautions are recommended to avoid performance degradation or loss of

functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. 0

–3–

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