N28F001BN-T150 查看數據表（PDF） - Intel

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N28F001BN-T150

1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

Intel 

28F001BX-T 28F001BX-B

DC CHARACTERISTICS (Continued)

VCC e 5 0V g10% TA e 0 C to a70 C

Symbol

Parameter

Notes Min Typ Max Unit

Test Conditions

ICCR VCC Read Current

1

ICCP VCC Programming Current

1

ICCE VCC Erase Current

1

ICCES VCC Erase Suspend Current

12

IPPS VPP Standby Current

1

IPPD VPP Deep Power-Down Current

1

IPPP VPP Programming Current

1

13

5

6

5

g1

90

0 80

6

30

20

20

10

g10

200

10

30

mA VCC e VCC Max CE e VIL

f e 8 MHz IOUT e 0 mA

mA Programming in Progress

mA Erase in Progress

mA Erase Suspended

CE e VIH

mA VPP s VCC

mA VPP l VCC

mA RP e GND g0 2V

mA VPP e VPPH

Programming in Progress

IPPE VPP Erase Current

1

6

30

mA VPP e VPPH

Erase in Progress

IPPES VPP Erase Suspend Current

1

90

300

mA VPP e VPPH

Erase Suspended

IID

A9 Intelligent Identifier Current

1

90 500 mA A9 e VID

VIL

Input Low Voltage

b0 5

08

V

VIH

Input High Voltage

20

VCC a 0 5 V

VOL Output Low Voltage

0 45

V VCC e VCC Min

IOL e 5 8 mA

VOH Output High Voltage

24

V VCC e VCC Min

IOH e 2 5 mA

VID

A9 Intelligent Identifier Voltage

11 5

13 0 V

VPPL VPP during Normal Operations

3 00

65

V

VPPH VPP during Prog Erase Operations

11 4 12 0 12 6 V

VLKO VCC Erase Write Lock Voltage

25

V

VHH RP OE Unlock Voltage

11 4

12 6 V Boot Block Prog Erase

NOTES

1 All currents are in RMS unless otherwise noted Typical values at VCC e 5 0V VPP e 12 0V TA e 25 C These currents

are valid for all product versions (packages and speeds)

2 ICCES is specified with the device deselected If the 28F001BX is read while in Erase Suspend mode current draw is the

sum of ICCES and ICCR

3 Erase Programs are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and VPPL

17

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