GS8180D18D-167 查看數據表（PDF） - Giga Semiconductor

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GS8180D18D-167

18Mb Burst of 4 SigmaQuad SRAM

Giga Semiconductor 

GS8180D18D-250/200/167/133/100

Input and Output Leakage Characteristics

Parameter

Input Leakage Current

(except mode pins)

Symbol

IIL

Output Leakage Current

IOL

Test Conditions

VIN = 0 to VDD

Output Disable,

VOUT = 0 to VDDQ

Min.

–2 uA

–2 uA

Max Notes

2 uA

2 uA

Programmable Impedance HSTL Output Driver DC Electrical Characteristics

Parameter

Symbol

Min.

Output High Voltage

VOH1

VDDQ/2

Output Low Voltage

VOL1

Vss

Output High Voltage

VOH2

VDDQ – 0.2

Output Low Voltage

VOL2

Vss

Notes:

1. IOH = (VDDQ/2) / (RQ/5) +/– 15% @ VOH = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).

2. IOL = (VDDQ/2) / (RQ/5) +/– 15% @ VOL = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).

3. Parameter tested with RQ = 250Ω and VDDQ = 1.5 V or 1.8 V

4. Minimum Impedance mode, ZQ = VSS

5. IOH = –1.0 mA

6. IOL = 1.0 mA

Max.

VDDQ

VDDQ/2

VDDQ

0.2

Units Notes

V

1, 3

V

2, 3

V

4, 5

V

4, 6

Operating Currents

-250

-200

-167

-133

-100

Parameter Org Symbol 0°C –40°C 0°C –40°C 0°C –40°C 0°C –40°C 0°C –40°C

to

to

to

to

to

to

to

to

to

to

70°C +85°C 70°C +85°C 70°C +85°C 70°C +85°C 70°C +85°C

Operating

Current

x18

IDD

TBD TBD

460

mA

TBD

400

mA

TBD

340

mA

TBD

280

mA

TBD

IDDQ TBD TBD 95 mA TBD 85 mA TBD 70 mA TBD 65 mA TBD

Test Conditions

R and W ≤ VIL Max.

tKHKH ≥ tKHKH Min.

All other inputs

VIN ≤ VIL Max. or VIN ≥ VIH Min.

Chip

Disable

Current

ISB1 TBD

x18

ISBQ1 TBD

TBD

130

mA

TBD

120

mA

TBD

115

mA

TBD

110

mA

TBD

TBD 5 mA TBD 5 mA TBD 5 mA TBD 5 mA TBD

Note:

Power measured with output pins floating.

R and W ≥ VIH Min.

tKHKH ≥ tKHKH Min.

All other inputs

VIN ≤ VIL Max. or VIN ≥ VIH Min.

Rev: 2.04 4/2005

15/28

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2002, GSI Technology

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