ILX505A 查看數據表（PDF） - Sony Semiconductor

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ILX505A

2592-pixel CCD Linear Image Sensor (B/W)

Sony Semiconductor 

ILX505A

Electro-optical Characteristics

(Ta = 25°C, VDD1 = 9V, VDD2 = 5V, Clock frequency: 1MHz,

Light source = 3200K, IR cut filter: CM-500S (t = 1.0mm)),

When Internal RS (Pin 19 = GND, Pin 10 = VDD2)

Item

Sensitivity 1

Sensitivity 2

Sensitivity nonuniformity

Saturation output voltage

Dark voltage average

Dark signal nonuniformity

Image lag

Dynamic range

Saturation exposure

9V supply current

5V supply current

Total transfer efficiency

Output impedance

Offset level

Symbol

R1

R2

PRNU

VSAT

VDRK

DSNU

IL

DR

SE

IVDD1

IVDD2

TTE

ZO

VOS

Min.

16.8

—

—

1.5

—

—

—

—

—

—

—

92.0

—

—

Typ.

21

53

2.0

1.8

0.3

0.5

0.02

6000

0.085

14.0

5.0

97.0

600

4.5

Max.

25.2

—

8.0

—

2.0

3.0

—

—

—

20.0

10.0

—

—

—

Unit

V/(lx · s)

V/(lx · s)

%

V

mV

mV

%

—

lx · s

mA

mA

%

Ω

V

Remarks

Note 1

Note 2

Note 3

—

Note 4

Note 4

Note 5

Note 6

Note 7

—

—

—

—

Note 8

Notes)

1) For the sensitivity test light is applied with a uniform intensity of illumination.

2) W lamp (2854K)

3) PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 1.

PRNU =

(VMAX – VMIN)/2

VAVE

× 100 [%]

The maximum output of all the valid pixels is set to VMAX, the minimum output to VMIN and the average

output to VAVE.

4) Integration time is 10ms.

5) VOUT = 500mV

6) DR = VSAT/VDRK

7) SE = VSAT/R1

8) VOS is defined as indicated below.

Signal is observed at PNP-type emitter follower out.

D31

D32

D33

S1

OS

VOS

GND

–5–

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