AMMC-6231-W10 查看數據表（PDF） - Avago Technologies
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AMMC-6231-W10 Datasheet PDF : 8 Pages
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AMMC-6231 DC Specifications/Physical Properties [1]
Symbol
Id
θch-b
Parameters and Test Conditions
Drain Supply Current (under any RF power drive and temperature) (Vd=3.0 V)
Thermal Resistance[2] (Backside temperature, Tb = 25°C)
Units Min. Typ.
mA
60
°C/W
25
Max.
80
AMMC-6231 RF Specifications [3, 4, 5]
TA= 25°C, Vd=3.0 V, Id(Q)=60 mA, Zin=Zo=50 Ω
Symbol Parameters and Test Conditions
Gain Small-signal Gain[6]
NF
Noise Figure into 50 Ω
Units Minimum
dB 20
dB
P-1dB
OIP3
RLin
RLout
Output Power at 1dB Gain Compression dBm
Third Order Intercept Point; ∆f=100MHz; dBm
Pin=-35dBm
Input Return Loss[6]
dB
Output Return Loss[6]
dB
Typical
22
18-28 GHz = 2.5
28-32 GHz = 2.7
+8.5
+19
Maximum
18-28 GHz = 2.8
28-32 GHz = 2.9
Sigma
0.4
0.1
-9
-8
0.3
-16
-12
0.5
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (qch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25°C calculated from measured data.
3. Small/Large -signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at frequency =18, 26, and 31 GHz.
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a more
narrow bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching.
6. As derived from measured s-parameters
USL
LSL
USL
2.5 2.6 2.7 2.8 2.9
21 21.2 21.4 21.6 21.8 22 22.2 22.4
-10
-9
-8
Noise Figure at 31 GHz
Noise Figure at 26 GHz
S11 at 31GHz
Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several
production lots.
2
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