HGTG12N60B39A 查看數據表（PDF） - Fairchild Semiconductor
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HGTG12N60B39A Datasheet PDF : 8 Pages
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HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Typical Performance Curves Unless Otherwise Specified (Continued)
300
TJ = 150oC, RG = 25Ω, L = 1mH, VCE = 480V
100
TC VGE
75oC 15V
75oC 10V
110oC 15V
110oC 10V
16
VCE = 360V, RG = 25Ω, TJ = 125oC
14
12
10
100
90
ISC
80
70
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.2oC/W, SEE NOTES
1
2
3
10
20
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
8
60
6
50
tSC
4
40
2
30
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
70
TC = -55oC
60
50
TC = 150oC
40
30
TC = 25oC
20
DUTY CYCLE <0.5%, VGE = 10V
PULSE DURATION = 250µs
10
0
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3.0
RG = 25Ω, L = 1mH, VCE = 480V
2.5
TJ = 25oC, TJ = 150oC, VGE = 10V
2.0
1.5
1.0
0.5
TJ = 25oC, TJ = 150oC, VGE = 15V
0
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
180 DUTY CYCLE <0.5%, VGE = 15V TC = -55oC
160 PULSE DURATION = 250µs
140
120
100
80
TC = 150oC
60
TC = 25oC
40
20
0
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
2.5
RG = 25Ω, L = 1mH, VCE = 480V
2.0
1.5
TJ = 150oC; VGE = 10V OR 15V
1.0
0.5
TJ = 25oC; VGE = 10V OR 15V
0
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2002 Fairchild Semiconductor Corporation
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
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