AP2125KS-4.2TRE1 查看數據表（PDF） - BCD Semiconductor

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AP2125KS-4.2TRE1

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Typical Performance Characteristics (Continued)

AP2125

4.8

3.8

2.8

0.02

0

-0.02

AP2125-1.8

Time (40µs/Div)

Figure 28. Line Transient

(Conditions: IOUT=30mA, COUT=1µF, VIN=2.8 to 3.8V)

AP2125-3.3

5

4.5

4

0.05

0

-0.05

Time (100µs/Div)

Figure 29. Line Transient

(Conditions: IOUT=30mA, COUT=1µF, VIN=4 to 5V)

AP2125-1.8

1.84

1.82

1.8

100

50

0

Time (40µs/Div)

Figure 30. Load Transient

(Conditions: IOUT=10 to 100mA, CIN=1µF,

COUT=1µF, VIN=2.8 V)

AP2125-3.3

3.34

3.32

3.3

100

50

0

Time (40µs/Div)

Figure 31. Load Transient

(Conditions: IOUT=10 to 100mA, CIN=1µF,

COUT=1µF, VIN=4.3 V)

May. 2010 Rev. 1. 4

BCD Semiconductor Manufacturing Limited

19

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