BCR2PM-12(2002) 查看數據表（PDF） - MITSUBISHI ELECTRIC
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BCR2PM-12 Datasheet PDF : 4 Pages
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REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
105
7 TYPICAL EXAMPLE
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
102
7
5
3
DISTRIBUTION
T2+, G–
2
TYPICAL
EXAMPLE
101
7
5
3
2
100
7
5
3
T2–, G–
2 TYPICAL
EXAMPLE
10-1
–40 0
40
80 120 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
I QUADRANT
80
60
III QUADRANT
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7
TYPICAL EXAMPLE
5
4
IRGT I
3
2
102
IRGT III
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Mar.2002
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