CR2AM 查看數據表（PDF） - MITSUBISHI ELECTRIC
零件编号
产品描述 (功能)
生产厂家
CR2AM Datasheet PDF : 6 Pages
| |||
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR2AM
OUTLINE DRAWING
10 MAX
4
φ3.2±0.1
TYPE NAME @
VOLTAGE
CLASS
∗
Dimensions
in mm
0.5
1.2±0.1
0.8
0.8
• IT (AV) ........................................................................... 2A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
2.5 2.5
123
0.5
1.5 MIN
∗ Measurement point of
case temperature
10 MAX 24
3
1
1 CATHODE
2 ANODE
3 GATE
4 ANODE
TO-202
APPLICATION
Control of household equipment such as electric blandets, leakage protector, static switch, other
general purpose control applications, ignitors
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VRRM
Repetitive peak reverse voltage
400
600
V
VRSM
Non-repetitive peak reverse voltage
500
720
V
VR (DC)
DC reverse voltage
320
VDRM
Repetitive peak off-state voltage V1
400
VD (DC)
DC off-state voltage
V1
320
480
V
600
V
480
V
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. With Gate-to-cathode resistance RGK=1kΩ
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=75°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, Surge on-state
current
Typical value
Ratings
Unit
3.15
A
2.0
A
20
A
1.6
A2s
0.5
W
0.1
W
6
V
6
V
0.3
A
–40 ~ +125
°C
–40 ~ +125
°C
1.6
g
Feb.1999
Share Link: 