CR2AM 查看數據表（PDF） - MITSUBISHI ELECTRIC
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CR2AM Datasheet PDF : 6 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Min.
IRRM
Repetitive peak reverse current
Tj=125°C, VRRM applied
—
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied, RGK=1kΩ
—
VTM
On-state voltage
Tc=25°C, ITM=4A, Instantaneous value
—
VGT
Gate trigger voltage
Tj=25°C, VD=6V, IT=0.1A
—
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM, RGK=1kΩ
0.2
IGT
Gate trigger current
Tj=25°C, VD=6V, IT=0.1A
1
Rth (j-c)
Thermal resistance
Junction to case V2
—
V2. The method point for case temperature is at the anode tab 1.5mm away from the molded case.
V3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
IGT (µA)
A
1 ~ 30
B
20 ~ 50
C
40 ~ 100
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
Limits
Typ.
—
—
—
—
—
—
—
Max.
0.1
0.1
1.8
0.8
—
100 V 3
10
Unit
mA
mA
V
V
V
µA
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
101
7 Tc = 25°C
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
20
18
16
14
12
10
8
6
4
2
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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