CR2AM 查看數據表（PDF） - MITSUBISHI ELECTRIC
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CR2AM Datasheet PDF : 6 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE CHARACTERISTICS
102
7
5
3
2
101
VFGM = 6V
7
PGM = 0.5W
5
3
PG(AV) = 0.1W
2
100
VGT = 0.8V
7
5
IGT = 100µA
3
(Tj = 25°C)
2
10–1
7
5
3
2
VGD = 0.15V
IFGM = 0.3A
10–2
5 710–12 3 5 71002 3 5 71012 3 5 7102 2 3 5
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
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0.1
0
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
5.0
180°
4.5
90° 120°
4.0
60°
3.5
θ = 30°
3.0
2.5
2.0
1.5
1.0
0.5
0
0
θ
360°
RESISTIVE, INDUCTIVE LOADS
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
3
2 JUNCTION TO AMBIENT
102
7
5
3
2
101
7
5
3
2
JUNCTION TO CASE
100
7
5
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
140
θ
120
360°
RESISTIVE,
100
INDUCTIVE
80
LOADS
60
40
20 θ = 30°
90°
180°
60° 120°
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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