MX28F2100BTC-12 查看數據表（PDF） - Macronix International

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MX28F2100BTC-12

2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY

Macronix International 

MX28F2100B

COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION

DC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V ± 10%, VPP = 12V ± 7%

SYMBOL

PARAMETER

MIN.

TYP

MAX.

UNIT CONDITIONS

ILI

Input Leakage Current

1

uA VIN=GND to VCC

ILO

Output Leakage Current

10

uA VOUT=GND to VCC

ISB1

Standby VCC current

1

mA CE=VIH

ISB2

1

100

uA CE=VCC ± 0.3V

ICC1 (Read) Operating VCC Current

50

mA IOUT=0mA, f=1MHz

ICC2

70

mA IOUT=0mA, F=10MHz

ICC3 (Program)

50

mA In Programming

ICC4 (Erase)

50

mA In Erase

ICCES

VCC Erase Suspend Current

10

mA CE=VIH, Erase Suspended

IPP1 (Read) VPP Current

200

uA VPP=12.8V

IPP2 (Program)

50

mA In Programming

IPP3 (Erase)

50

mA In Erase

VIL

Input Voltage

-0.3 (Note 5)

0.8

V

VIH

2.0

VCC+0.3V V

(Note 6)

VOL

Output Voltage

0.45

V

IOL=2.1mA

VOH

2.4

V

IOH=-400uA

VPPLK

VPP Lockout Voltage

0.0

6

V

VPPH

VPP for Program/Erase Operation 11.16

12.84

V

12V ± 7%

NOTES:

1. VCC must be applied before VPP and remove after VPP.

2. VPP must not exceed 14V including overshoot.

3. An influence may be had upon device reliability if the device

is installed or removed while VPP=12V.

4. Do not alter VPP either VIL to 12V or 12V to VIL when

CE=VIL.

5. VIL min. = -0.6V for pulse width < 20ns.

6. If VIH is over the specified maximum value, programming

operation cannot be guranteed.

7. ICCES is specified with the device de-selected. If the device

is read during erase suspend mode, current draw is the sum

of ICCES and ICC1 or ICC2.

8. All current are in RMS unless otherwisw noted.

P/N: PM0382

REV. 1.5, MAR. 24, 1998

15

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