APM2070PDC-TU 查看數據表（PDF） - Anpec Electronics
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APM2070PDC-TU Datasheet PDF : 10 Pages
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APM2070PD
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
VGS=-4.5V
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
PD* Power Dissipation for Single Operation
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
TA=25°C
TA=100°C
Rating
-20
±12
-3
-12
-1.5
150
-55 to 150
1.47
0.58
85
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=0V, IDS=-250µA
VDS=-16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
VGS=±12V, VDS=0V
VGS=-4.5V, IDS=-3A
VGS=-2.5V, IDS=-1.5A
ISD=-1A , VGS=0V
VDS=-10V, VGS=-4.5V,
IDS=-3A
APM2070PD
Unit
Min. Typ. Max.
-20
V
-1
µA
-30
-0.6 -0.75 -1
V
±100 nA
50 70
mΩ
70 100
-0.7 -1.3 V
17.4 23
2.7
nC
3.8
Copyright ANPEC Electronics Corp.
2
Rev. B.1 - Apr., 2005
www.anpec.com.tw
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