APW7067N
Application Information (Cont.)
Input Capacitor Selection (Cont.)
tested by the manufactures. If in doubt, consult the
capacitors manufacturer. For high frequency decoupling,
a ceramic capacitor 1µF can be connected between the
drain of upper MOSFET and the source of lower MOSFET.
MOSFET Selection
The selection of the N-channel power MOSFETs are
determined by the R , reverse transfer capacitance
DS(ON)
(CRSS) and maximum output current requirement. There
are two components of loss in the MOSFETs: conduction
loss and transition loss. For the upper and lower
MOSFET, the losses are approximately given by the
following:
PUPPER = IOUT1 2(1+ TC)(RDS(ON))D + (0.5)( IOUT1)(VIN1)( tSW)FS
PLOWER = IOUT1 2(1+ TC)(RDS(ON))(1-D)
Where IOUT1 is the load current
TC is the temperature dependency of R
DS(ON)
FS is the switching frequency
tSW is the switching interval
D is the duty cycle
Note that both MOSFETs have conduction loss while the
upper MOSFET include an additional transition loss. The
switching internal, tSW, is a function of the reverse transfer
capacitance CRSS. The (1+TC) term is to factor in the
temperature dependency of the RDS(ON) and can be extracted
from the “RDS(ON) vs Temperature” curve of the power
MOSFET.
Copyright © ANPEC Electronics Corp.
17
Rev. A.3 - Mar., 2008
www.anpec.com.tw