BC549C 查看數據表（PDF） - ON Semiconductor
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BC549C Datasheet PDF : 4 Pages
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BC549C, BC550C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
45
−
Vdc
−
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
50
−
Vdc
−
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
−
Vdc
−
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 30 V, IE = 0, TA = +125°C)
ICBO
−
−
15
nAdc
−
−
5.0
mAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
nAdc
−
−
15
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE
−
100
270
−
420
500
800
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)
VCE(sat)
Vdc
−
0.075
0.25
−
0.3
0.6
−
0.25
0.6
Base−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
VBE(sat)
Vdc
−
1.1
−
Base−Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
VBE(on)
−
0.52
−
0.55
0.55
0.62
Vdc
−
−
0.7
Current −Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
MHz
−
250
−
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccbo
pF
−
2.5
−
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
hfe
−
450
600
900
Noise Figure
(IC = 200 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
(IC = 200 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 ms − Duty cycle = 2%.
dB
NF1
−
0.6
2.5
NF2
−
−
10
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
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