BC560CG 查看數據表（PDF） - ON Semiconductor
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BC560CG Datasheet PDF : 4 Pages
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BC560C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
(VCB = −30 Vdc, IE = 0, TA = +125°C)
Emitter Cutoff Current
(VEB = −4.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = (Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc, (Note 2)
Base −Emitter Saturation Voltage
(IC = −100 mAdc, IB = −5.0 mAdc)
Base−Emitter On Voltage
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −100 mAdc, VCE = −5.0 Vdc)
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = −5.0 V, f = 1.0 kHz)
Noise Figure
(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 100 kW, f = 1.0 kHz, Df = 200 kHz)
1. IB is value for which IC = −11 mA at VCE = −1.0 V.
2. Pulse test = 300 ms − Duty cycle = 2%.
Symbol
Min
Typ
Max
Unit
V(BR)CEO
−45
−
V(BR)CBO
−50
−
V(BR)EBO
−5.0
−
Vdc
−
Vdc
−
−
Vdc
ICBO
IEBO
−
−
−15
nAdc
−
−
−5.0
mAdc
nAdc
−
−
−15
hFE
−
100
270
−
380
500
800
VCE(sat)
Vdc
−
−0.075 −0.25
−
−0.3 −0.6
−
−0.25
−
VBE(sat)
Vdc
−
−1.1
−
VBE(on)
Vdc
−
−0.52
−
−
−0.55
−
−0.55 −0.62 −0.7
fT
Ccbo
hfe
NF1
NF2
MHz
−
250
−
pF
−
2.5
−
−
450
600
900
dB
−
0.5
2.0
−
−
10
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