DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BCR8PM-14LJ 查看數據表(PDF) - Renesas Electronics

零件编号
产品描述 (功能)
生产厂家
BCR8PM-14LJ
Renesas
Renesas Electronics Renesas
BCR8PM-14LJ Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BCR8PM-14LJ
Performance Curves
Maximum On-State Characteristics
102
Tj = 150°C
101
Tj = 25°C
100
0
1
2
3
4
On-State Voltage (V)
Gate Characteristics (I, II and III)
VGM = 10V
101
PG(AV) = 0.5W
PGM = 5W
VGT = 1.5V
IGM = 2A
100
101
IFGT I IRGT I, IRGT III
VGD = 0.1V
101
102
103
104
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
103
Typical Example
102
101
–40 0
40 80 120 160
Junction Temperature (°C)
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
Preliminary
Rated Surge On-State Current
100
80
60
40
20
0
100
101
102
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
103
Typical Example
IRGT III
102
IRGT I, IFGT I
101
–40 0
40 80 120 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
5
4
3
2
1
0101
100
101
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]