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BCX17LT3G 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
BCX17LT3G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
BCX17LT3G Datasheet PDF : 4 Pages
1 2 3 4
BCX17LT1, BCX18LT1, PNP
BCX19LT1, NPN
General Purpose
Transistors
Voltage and Current are Negative for
PNP Transistors
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
BCX17LT1, BCX19LT1
BCX18LT1
VCEO
Vdc
45
25
Collector − Base Voltage
BCX17LT1, BCX19LT1
BCX18LT1
VCBO
Vdc
50
30
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VEBO
IC
5.0
Vdc
500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
PD
(Note 1), TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
http://onsemi.com
PNP
COLLECTOR
3
1
BASE
2
EMITTER
NPN
COLLECTOR 3
1
BASE
2 EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xx M G
G
1
xx
= T1, T2, or U1
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 4
Publication Order Number:
BCX17LT1/D

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