BD2200GUL-E2(2011) 查看數據表（PDF） - ROHM Semiconductor
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BD2200GUL-E2 Datasheet PDF : 10 Pages
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BD2200GUL, BD2201GUL
Technical Note
●Electrical Characteristics
○BD2200GUL (unless otherwise specified, VIN = 3.3V, Ta = 25℃)
Parameter
Limits
Symbol
Min. Typ. Max.
[Current consumption]
Operating current
IDD
-
20
30
Standby current
ISTB
-
0.01
1
[I/O]
EN input voltage
EN input current
VENH
1.2
-
-
VENL
-
-
0.4
IEN
-1
-
1
[Power switch]
On-resistance
RON
-
100 200
Switch leakage current
Output rise time
ILEAK
TON1
-
0.01
1
-
1.0
2.0
Output turn-on time
Output fall time
TON2
-
1.2
2.4
TOFF1
-
2.5
5.0
Output turn-off time
[Discharge circuit]
TOFF2
-
4.5
9.0
Discharge on-resistance
Discharge current
RDISC
-
70
110
IDISC
-
15
20
Unit
Condition
µA VEN = 1.2V, VOUT = open
µA VEN = 0V, VOUT = open
V High level input
V Low level input
µA VEN = 0V or VEN = 1.2V
mΩ ILO = 500mA
µA VEN = 0V, VOUT = 0V
ms RL = 10Ω, VOUT :10% → 90%
ms RL = 10Ω, VEN :50% →VOUT :90%
µs RL = 10Ω, VOUT :90% → 10%
µs RL = 10Ω, VEN :50% →VOUT :10%
Ω ILO = -1mA, VEN = 0V
mA VOUT = 3.3V, VEN = 0V
○BD2201GUL (unless otherwise specified, VIN = 3.3V, Ta = 25℃)
Parameter
Limits
Symbol
Min. Typ. Max.
[Current consumption]
Operating current
IDD
-
20
30
Standby current
ISTB
-
0.01
1
[I/O]
EN input voltage
VENH
1.2
-
-
VENL
-
-
0.4
EN input current
[Power switch]
IEN
-1
-
1
On-resistance
RON
-
100 180
Switch leakage current
ILEAK
-
0.01
1
Output rise time
TON1
-
1.0
2.0
Output turn-on time
TON2
-
1.2
2.4
Output fall time
TOFF1
-
2.5
5.0
Output turn-off time
TOFF2
-
4.5
9.0
[Discharge circuit]
Discharge on-resistance
RDISC
-
70
110
Discharge current
IDISC
-
15
20
Unit
Condition
µA VEN = 1.2V, VOUT = open
µA VEN = 0V, VOUT = open
V High level input
V Low level input
µA VEN = 0V or VEN = 1.2V
mΩ ILO = 500mA
µA VEN = 0V, VOUT = 0V
ms RL = 10Ω, VOUT :10% → 90%
ms RL = 10Ω, VEN :50% →VOUT :90%
µs RL = 10Ω, VOUT :90% → 10%
µs RL = 10Ω, VEN :50% →VOUT :10%
Ω ILO = -1mA, VEN = 0V
mA VOUT = 3.3V, VEN = 0V
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2/9
2011.02 - Rev.A
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