BF1210 查看數據表（PDF） - Philips Electronics
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BF1210 Datasheet PDF : 21 Pages
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
25
ID
(mA)
20
15
001aaf497
(1)
(2)
10
(3)
(4)
5
(5)
(6)
(7)
0
0
1
2
3
4
5
VGG = VDS (V)
(1) RG1(B) = 68 kΩ.
(2) RG1(B) = 82 kΩ.
(3) RG1(B) = 100 kΩ.
(4) RG1(B) = 120 kΩ.
(5) RG1(B) = 150 kΩ.
(6) RG1(B) = 180 kΩ.
(7) RG1(B) = 220 kΩ.
VG2-S = 5 V; RG1(B) connected to VGG; Tj = 25 °C.
Fig 23. Amplifier B: drain current as a function of VDS
and VGG; typical values
16
ID
(mA)
12
8
001aaf498
(1)
(2)
(3)
(4)
(5)
4
0
0
1
2
3
(1) VGG = 5.0 V.
(2) VGG = 4.5 V.
(3) VGG = 4.0 V.
(4) VGG = 3.5 V.
(5) VGG = 3.0 V.
RG1(B) = 150 kΩ; Tj = 25 °C.
4
5
VG2-S (V)
Fig 24. Amplifier B: drain current as a function of gate2
voltage; typical values
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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