BF410A 查看數據表（PDF） - Philips Electronics
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BF410A Datasheet PDF : 6 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
BF410A to D
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in a plastic TO-92 variant;
intended for applications up to the
VHF range.
These FETs can be supplied in four
IDSS groups. Special features are the
low feedback capacitance and the low
noise figure. Thanks to these special
features the BF410 is very suitable for
applications such as the RF stages in
FM portables (type A), car radios
(type B) and mains radios (type C) or
the mixer stage (type D).
PINNING - TO-92 VARIANT
1 = drain
2 = source
3 = gate
1
handbook, halfpage2
3
d
g
s
MAM257
Fig.1 Simplified outline and symbol
QUICK REFERENCE DATA
Drain-source voltage
Drain current (DC or average)
Total power dissipation
up to Tamb = 75 °C
Drain current
VDS = 10 V; VGS = 0
Transfer admittance
VDS = 10 V; VGS = 0; f = 1 kHz
Feedback capacitance
VDS = 10 V; VGS = 0
VDS = 10 V; ID = 5 mA
Noise figure at optimum source admittance
GS = 1 mS; −BS = 3 mS; f = 100 MHz
VDS = 10 V; VGS = 0
VDS = 10 V; ID = 5 mA
VDS
max.
ID
max.
20
V
30
mA
Ptot
max.
300
mW
BF410A
B
C
D
min.
0.7 2.5
6
10 mA
IDSS
max. 3.0 7.0
12
18 mA
yfs min.
Crs
typ.
Crs
typ.
2.5
4
6
7 mS
0.5 0.5
−
− pF
−−
0.5 0.5 pF
F
typ. 1.5 1.5
−
− dB
F
typ.
−−
1.5 1.5 dB
December 1990
2
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