NXP Semiconductors
BF1207
Dual N-channel dual gate MOSFET
8.2.2 Scattering parameters for amplifier B
Table 11. Scattering parameters for amplifier B
VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 14 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 C; typical values.
f
(MHz)
s11
Magnitude
(ratio)
Angle
(deg)
s21
Magnitude
(ratio)
Angle
(deg)
s12
Magnitude
(ratio)
Angle
(deg)
s22
Magnitude
(ratio)
Angle
(deg)
50
0.993
3.018 3.07
176.04 0.0004
95.97 0.991
1.39
100 0.992
6.186 3.07
172.05 0.0011
90.33 0.990
2.79
200 0.987
12.43 3.09
164.13 0.0024
85.03 0.988
5.49
300 0.979
18.60 3.02
156.28 0.0036
82.94 0.986
8.21
400 0.969
24.62 2.99
148.48 0.0046
81.97 0.983
10.91
500 0.957
30.72 2.95
140.69 0.0056
81.03 0.980
13.63
600 0.943
36.71 2.90
132.87 0.0065
79.77 0.977
16.40
700 0.927
42.77 2.86
125.21 0.0074
79.04 0.973
19.13
800 0.907
48.91 2.79
117.22 0.0082
79.42 0.969
21.93
900 0.885
54.77 2.736
109.29 0.0086
75.47 0.964
24.85
1000 0.858
61.01 2.675
101.18 0.0092
73.48 0.958
27.75
BF1207
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
17 of 23