Philips Semiconductors
1900 MHz high linear low noise amplifier
Product specification
BGA2012
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to solder point
CONDITIONS
Ptot = 135 mW; Ts ≤ 100 °C
VALUE
350
UNIT
K/W
CHARACTERISTICS
RF input AC coupled; VS = 3 V; IS = 7 mA; f = 1900 MHz; Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
IS
supply current
5
7.5
IC
control current
−
0.11
RL IN
return losses input
typical application; see Fig.2
−
−11
high IP3 (see Fig.2; stripline = 0 mm) −
−20
high IP3 (see Fig.2; stripline = 0.5 mm) −
−14
RL OUT
return losses output typical application; see Fig.2
−
−9
high IP3 (see Fig.2; stripline = 0 mm) −
−10
high IP3 (see Fig.2; stripline = 0.5 mm) −
−8
|s21|2
insertion power gain typical application (see Fig.2)
−
14
high IP3 (see Fig.2; stripline = 0 mm) −
16
high IP3 (see Fig.2; stripline = 0.5 mm) −
14
NF
noise figure
typical application; see Fig.2; IS = 7 mA −
1.7
high IP3 (see Fig.2; stripline = 0 mm) −
2.2
high IP3 (see Fig.2; stripline = 0.5 mm) −
2.3
IP3in
input intercept point typical application; see Fig.2
−
−7
high IP3 (see Fig.2; stripline = 0 mm) −
7
high IP3 (see Fig.2; stripline = 0.5 mm) −
10
MAX.
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
UNIT
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
2000 Dec 04
3