BGA2709 查看數據表（PDF） - Philips Electronics
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BGA2709 Datasheet PDF : 12 Pages
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Philips Semiconductors
MMIC wideband amplifier
Product specification
BGA2709
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to solder
point
CONDITIONS
Ptot = 200 mW; Ts ≤ 90 °C
VALUE
300
UNIT
K/W
CHARACTERISTICS
VS = 5 V; IS = 23.5 mA; Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IS
|s21|2
RL IN
RL OUT
|s12|2
NF
BW
K
PL(sat)
PL 1 dB
IP3(in)
IP3(out)
supply current
insertion power gain
return losses input
return losses output
isolation
noise figure
bandwidth
stability factor
saturated load power
load power
input intercept point
output intercept point
f = 100 MHz
f = 1 GHz
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1.6 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at |s21|2 −3 dB below flat gain at 1 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2.2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
MIN.
19
21
21
22
21
20
18
9
9
17
20
31
34
−
−
3.1
1.3
1.8
11
5
7
3
−3
−7
20
12
TYP.
23.5
22.2
22.7
23.0
23.0
22.1
21.1
11
11
20
24
33
36
4.0
4.4
3.6
1.7
2.2
12.5
7.5
8.3
5.4
−1
−9
22
14
MAX.
32
23
24
24
24
23
22
−
−
−
−
−
−
4.4
4.9
−
−
−
−
−
−
−
−
−
−
−
UNIT
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
−
−
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
2002 Aug 06
3
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