BGY1816S 查看數據表（PDF） - Philips Electronics
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BGY1816S Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF amplifier module
Product specification
BGY1816S
FEATURES
• 26 V nominal supply voltage
• 16 W output power into a load of 50 Ω with an RF drive
power of ≤20 mW.
APPLICATIONS
• Base station transmitting equipment operating in the
1805 to 1880 MHz frequency band.
PINNING - SOT501A
PIN
1
2
3
4
Flange
DESCRIPTION
RF input
VS1
VS2
RF output
ground
DESCRIPTION
The BGY1816S is a three-stage UHF amplifier module in
a SOT501A package with a plastic cap. It consists of three
NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic AlN substrate.
1
2
Front view
34
MBK760
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF OPERATION
f
(MHz)
VS1
VS2
PL
Gp
η
ZS; ZL
(V)
(V)
(W)
(dB)
(%)
(Ω)
CW
1805 to 1880
5
26
≥16
≥29
≥30
50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VS1
VS2
PD
PL
Tstg
Tmb
PARAMETER
DC supply voltage
DC supply voltage
input drive power
load power
storage temperature
operating mounting base temperature
CONDITIONS
Tmb = 25 °C
MIN.
4.5
−
−
−
−30
−10
MAX.
5.5
28
120
20
+100
+90
UNIT
V
V
mW
W
°C
°C
1999 Apr 13
2
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