BGY925_4 查看數據表（PDF） - Philips Electronics
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BGY925_4 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF amplifier module
Product specification
BGY925
FEATURES
• 26 V nominal supply voltage
• 23 W output power into a load of 50 Ω with an RF drive
power of 36 mW.
APPLICATIONS
• Base station transmitting equipment operating in the
920 to 960 MHz frequency range.
PINNING - SOT365A
PIN
1
2
3
4
Flange
DESCRIPTION
RF input
VS1
VS2
RF output
ground
DESCRIPTION
The BGY925 is a three-stage UHF amplifier module in a
SOT365A package. It consists of one NPN silicon planar
transistor die and two silicon MOSFET dies mounted on a
metallized ceramic AlN substrate, together with matching
and bias circuitry.
handbook, halfpage
12
34
MSA447
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF
f
VS1, VS2
PL
OPERATION
(MHz)
(V)
(W)
CW
920 to 960
26
23
Note
1. At PL = 16 W.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VS1
DC supply voltage
VS2
DC supply voltage
PD
input drive power
PL
load power
Tstg
storage temperature
Tmb
operating mounting-base temperature
Gp
(dB)
≥28
η
(%)
(note 1)
≥30
ZS, ZL
(Ω)
50
MIN.
−
−
−
−
−30
−10
MAX.
28
28
80
32
+100
+90
UNIT
V
V
mW
W
°C
°C
2000 Feb 02
2
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