DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BGY925_4 查看數據表(PDF) - Philips Electronics

零件编号
产品描述 (功能)
生产厂家
BGY925_4
Philips
Philips Electronics Philips
BGY925_4 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
UHF amplifier module
Product specification
BGY925
CHARACTERISTICS
ZS = ZL = 50 ; PL = 23 W; VS1 = VS2 = 26 V; Tmb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
f
IS1
IS2
PL
Gp
η
H2
H3
VSWRin
NF
B
frequency range
supply current
supply current
load power
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
reverse intermodulation
direct intermodulation
noise figure
AM bandwidth
ruggedness
PD < 60 dBm
160 mW PL < 2 W
2 W PL 23 W
PL = 16 W
PL = 16 W
PL = 16 W
VSWR 3 : 1 through all phases;
VS2 = 26 to 27 V; PL = 23 W
Pcarrier = 16 W; Pinterference = 1.6 µW;
fi = fc ± 600 kHz
Pcarrier = 16 W; Pinterference = 1.6 mW;
fi = fc + 270 kHz
corner frequency = 3 dB;
Pcarrier = 16 W; modulation = 20%
VSWR 5 : 1 through all phases;
VS2 = 26 V; PL = 23 W
920
50
500
23
28
30
28
30
30
80
55
2
no degradation
MAX.
960
34
32
35
40
2:1
60
UNIT
MHz
mA
mA
W
dB
dB
%
dBc
dBc
dBc
dBc
dBc
8
dBc
MHz
2000 Feb 02
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]