Philips Semiconductors
UHF amplifier module
Product specification
BGY925
CHARACTERISTICS
ZS = ZL = 50 Ω; PL = 23 W; VS1 = VS2 = 26 V; Tmb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
f
IS1
IS2
PL
Gp
η
H2
H3
VSWRin
NF
B
frequency range
supply current
supply current
load power
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
reverse intermodulation
direct intermodulation
noise figure
AM bandwidth
ruggedness
PD < −60 dBm
160 mW ≤ PL < 2 W
2 W ≤ PL ≤ 23 W
PL = 16 W
PL = 16 W
PL = 16 W
VSWR ≤ 3 : 1 through all phases;
VS2 = 26 to 27 V; PL = 23 W
Pcarrier = 16 W; Pinterference = 1.6 µW;
fi = fc ± 600 kHz
Pcarrier = 16 W; Pinterference = 1.6 mW;
fi = fc + 270 kHz
corner frequency = 3 dB;
Pcarrier = 16 W; modulation = 20%
VSWR ≤ 5 : 1 through all phases;
VS2 = 26 V; PL = 23 W
920 −
−
50
−
500
23
−
28
30
28
30
30
−
−
−
−
−
−
−
−
−
−
−80
−
−55
2
−
no degradation
MAX.
960
−
−
−
34
32
−
−35
−40
2:1
−60
UNIT
MHz
mA
mA
W
dB
dB
%
dBc
dBc
dBc
−
dBc
−
dBc
8
dBc
−
MHz
2000 Feb 02
3