BGY925_4 查看數據表（PDF） - Philips Electronics
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BGY925_4 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF amplifier module
Product specification
BGY925
handbook,3h5alfpage
Gp
(dB)
30
MCD834
25
20
800
900
1000
1100
f (MHz)
ZS = ZL = 50 Ω; PD = −30 dBm; VS1 = VS2 = 26 V; Tmb = 25 °C.
Fig.6 Small signal in band power gain as a
function of frequency; typical values.
hanRdbeotoukr,nh0alfpage
Losses
(dB)
−4
−8
−12
−16
−20
800
900
MCD835
1000
1100
f (MHz)
ZS = ZL = 50 Ω; PD = −30 dBm; VS1 = VS2 = 26 V; Tmb = 25 °C.
Fig.7 Small signal in band input return losses as
a function of frequency; typical values.
40
handboGopk, halfpage
(dB)
20
0
−20
−40
−60
−80
0
500
MCD836
1000
1500
f (MHz)
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; PD = −30 dBm; Tmb = 25 °C.
Fig.8 Small signal out band power gain as a
function of frequency; typical values.
2000 Feb 02
34
handbook, halfpage
Gp
(dB)
32
30
28
26
MCD837
(1)
(2)
(5)
(6)
(7)
(3)
(4)
24
0
10
20
30
40
PL (W)
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; Tmb = 25 °C.
(1) Tamb = −33°C.
(2) Tamb = −20°C.
(3) Tamb = 3°C.
(4) Tamb = 25°C.
(5) Tamb = 50°C.
(6) Tamb = 75°C.
(7) Tamb = 100°C.
Fig.9 Power gain as a function of load power;
typical values
5
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