BS62LV4006 查看數據表（PDF） - Brilliance Semiconductor

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产品描述 (功能)

生产厂家

BS62LV4006

Very Low Power CMOS SRAM 512K X 8 bit

Brilliance Semiconductor 

n Revision History

Revision No. History

1.2

To add Icc1 characteristic parameter

To improve Iccsb1 spec.

I-grade from 60uA to 20uA at 5.0V

10uA to 4.0uA at 3.0V

C-grade from 30uA to 10uA at 5.0V

5.0uA to 2.0uA at 3.0V

1.3

To Add 400 mil TSOP II package type

1.4

Change I-grade operation temperature range

- from –25OC to –40OC

BS62LV4006

Draft Date

Jan. 13, 2006

Remark

March 20, 2006

May. 25, 2006

R0201-BS62LV4006

12

Revision 1.4

May.

2006

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