BS62LV4008 查看數據表（PDF） - Brilliance Semiconductor
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BS62LV4008 Datasheet PDF : 10 Pages
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BSI
BS62LV4008
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
NAME
VIL
VIH
IIL
PARAMETER
Guaranteed Input Low
Voltage(3)
Guaranteed Input High
Voltage(3)
Input Leakage Current
TEST CONDITIONS
Vcc = 3.0 V
Vcc = Max, VIN = 0V to Vcc
Vcc = 3.0 V
ILO
Output Leakage Current
Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
VOL
Output Low Voltage
Vcc = Max, IOL = 2.0mA
Vcc = 3.0 V
VOH
Output High Voltage
Vcc = Min, IOH = -1.0mA
Vcc = 3.0 V
(5)
ICC
Operating Power Supply CE = VIL, IDQ = 0mA, Vcc = 3.0 V
55ns
Current
F=Fmax (2)
70ns
MIN. TYP. (1) MAX.
-0.5
--
0.8
2.0
--
Vcc+0.3
--
--
1
--
--
1
--
--
0.4
2.4
--
--
--
--
30
25
UNITS
V
V
uA
uA
V
V
mA
ICCSB
Standby Current-TTL
CE = VIH, IDQ = 0mA
Vcc = 3.0 V
--
--
0.5
mA
(4)
ICCSB1
Standby Current-CMOS CE ≧ Vcc-0.2V,
Vcc = 3.0 V
--
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
0.45
10
uA
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/tRC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. IccSB1_MAX. is 5uA at Vcc=3.0V and TA=70oC.
5. Icc_MAX. is 29mA(@55ns) / 24mA(@70ns) at Vcc=3.0V and TA=0~70oC.
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
CE ≧ Vcc - 0.2V
VDR
Vcc for Data Retention
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
CE ≧ Vcc - 0.2V
ICCDR
Data Retention Current
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.3
1.3
uA
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
tR
Operation Recovery Time
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR_MAX. is 0.8uA at TA=70OC.
LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )
0
--
--
ns
TRC (2)
--
--
ns
Vcc
CE
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE ≥ Vcc - 0.2V
Vcc
tR
VIH
R0201-BS62LV4008
3
Revision 1.1
Jan. 2004
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