Q67000-S225 查看數據表（PDF） - Siemens AG

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Q67000-S225

SIPMOS ® Small-Signal Transistor

Siemens AG 

BSP 299

Maximum Ratings

Parameter

Chip or operating temperature

Storage temperature

Thermal resistance, chip to ambient air

Therminal resistance, junction-soldering point 1)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJA

RthJS

Values

Unit

-55 ... + 150 °C

-55 ... + 150

≤ 70

K/W

≤ 10

E

55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 0.25 mA, Tj = 0 °C

500

-

Gate threshold voltage

VGS(th)

VGS=VDS, ID = 1 mA

2.1

3

Zero gate voltage drain current

IDSS

VDS = 500 V, VGS = 0 V, Tj = 25 °C

-

0.1

VDS = 500 V, VGS = 0 V, Tj = 125 °C

-

10

Gate-source leakage current

IGSS

VGS = 20 V, VDS = 0 V

-

10

Drain-Source on-state resistance

RDS(on)

VGS = 10 V, ID = 0.4 A

-

3.5

-

4

1

100

100

4

Unit

V

µA

nA

Ω

Semiconductor Group

2

Sep-12-1996

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