BSS127(2010) 查看數據表（PDF） - Infineon Technologies
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BSS127 Datasheet PDF : 9 Pages
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Type
SIPMOS® Small-Signal-Transistor
Features
• n-channel
• enhancement mode
• Logic level (4.5V rated)
• dv /dt rated
• Qualified according to AEC Q101
• 100%lead-free; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
BSS127
600 V
500 Ω
0.021 A
PG-SOT-23
Type
BSS127
Package Pb-free
PG-SOT-23 Yes
Tape and Reel Information
L6327: 3000PCS/reel
Marking
Sis
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD class
(JESD22-A114-HBM)
ID
I D,pulse
dv /dt
V GS
T A=25 °C
T A=70 °C
T A=25 °C
I D=0.09 A,
V DS=480 V,
di /dt =200 A/µs,
T j,max=150 °C
Power dissipation
P tot
T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
0.021
0.017
0.09
6
±20
0 (<250V)
0.50
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 1.47
page 1
2010-07-29
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