BSS127(2010) 查看數據表（PDF） - Infineon Technologies

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BSS127
(Rev.:2010)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Parameter

Thermal characteristics

Thermal resistance,

junction - minimal footprint

Symbol Conditions

R thJA

BSS127

min.

Values

typ.

Unit

max.

-

-

250 K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 µA

600

-

-V

Gate threshold voltage

V GS(th) V DS=VGS, I D=8 µA

1.4

2.0

2.6

Drain-source leakage current

I D (off)

V DS=600 V, V GS=0 V,

T j=25 °C

-

-

0.1 µA

V DS=600 V, V GS=0 V,

T j=150 °C

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on)

V GS=4.5 V,

I D=0.016 A

-

-

10

10

100 nA

330

600 Ω

V GS=10 V, I D=0.016 A

-

310

500

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=0.01 A

0.007

0.015

-S

Rev. 1.47

page 2

2010-07-29

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