BSS127(2010) 查看數據表（PDF） - Infineon Technologies
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BSS127 Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=0.016 A; V GS=10 V
1000
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=8 µA
parameter: I D
3.5
BSS127
900
3
800
max
700
2.5
600
98 %
500
400
typ
300
200
100
2
typ
1.5
min
1
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
102
Ciss
101
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
10-1
150 °C, 98%
25 °C, 98%
150 °C 25 °C
Coss
10-2
Crss
100
10-1
0
Rev. 1.47
5
10
15
20
25
V DS [V]
10-3
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V SD [V]
page 6
2010-07-29
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