Philips Semiconductors
NPN medium power transistors
Product specification
BSX45; BSX46; BSX47
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• General industrial applications.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
handbook, halfpag1e
2
3
3
2
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
ICM
Ptot
hFE
collector-base voltage
open emitter
BSX45
BSX46
BSX47
collector-emitter voltage
open base
BSX45
BSX46
BSX47
peak collector current
total power dissipation
Tcase ≤ 25 °C
DC current gain
IC = 100 mA; VCE = 1 V
BSX45-10; BSX46-10; BSX47-10
−
−
80 V
−
−
100 V
−
−
120 V
−
−
40 V
−
−
60 V
−
−
80 V
−
−
1.5 A
−
−
6.25 W
63 100 160
BSX45-16; BSX46-16; BSX47-16
100 160 250
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz 50 −
−
MHz
1997 Apr 23
2