BTA201W 查看數據表（PDF） - NXP Semiconductors.
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BTA201W Datasheet PDF : 13 Pages
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NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
6. Static characteristics
Table 5. Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
BTA201W-600E and BTA201W-800E
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; see Figure 8
T2+ G+
1
-
10
mA
T2+ G−
1
-
10
mA
T2− G−
1
-
10
mA
IL
latching current
VD = 12 V; IG = 0.1 A; see Figure 10
T2+ G+
-
-
12
mA
T2+ G−
-
-
20
mA
T2− G−
-
-
12
mA
IH
holding current
VD = 12 V; IG = 0.1 A; see Figure 11 -
-
12
mA
VT
on-state voltage
IT = 1.4 A; see Figure 9
-
1.2
1.5
V
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; see Figure 7
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C
0.2
0.3
-
V
ID
off-state current
VD = VDRM(max); Tj = 125 °C
-
0.1
0.5
mA
BTA201W_SER_3
Product data sheet
Rev. 03 — 13 March 2008
© NXP B.V. 2008. All rights reserved.
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