BTS118D 查看數據表（PDF） - Infineon Technologies

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BTS118D

Smart Low Side Power Switch Power HITFET

Infineon Technologies 

Smart Low Side Power Switch

Power HITFET BTS 118D

Maximum Ratings at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Drain source voltage

Supply voltage for full short circuit protection

Continuous input voltage1)

Continuous input current2)

-0.2V £ VIN £ 10V

VIN < -0.2V or VIN > 10V

VDS

Vbb(SC)

VIN

IIN

Operating temperature

Storage temperature

Power dissipation 5)

TC = 85 °C

6cm2 cooling area , TA = 85 °C

Unclamped single pulse inductive energy 2)

Load dump protection VLoadDump2)3) = VA + VS

VIN = 0 and 10 V, td = 400 ms, RI = 2 W,

RL = 6 W, VA = 13.5 V

Tj

Tstg

Ptot

EAS

VLD

Electrostatic discharge voltage2) (Human Body Model) VESD

according to Jedec norm

EIA/JESD22-A114-B, Section 4

Value

42

42

-0.2 2) ... +10

self limited

| IIN | £ 2

-40 ...+150

-55 ... +150

21

1.1

2

58

2

Unit

V

mA

°C

W

J

V

kV

Thermal resistance

junction - case:

SMD: junction - ambient

@ min. footprint

@ 6 cm2 cooling area 4)

RthJC

RthJA

3

K/W

115

55

1For input voltages beyond these limits I IN has to be limited.

2not subject to production test, specified by design

3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain

connection. PCB mounted vertical without blown air.

5not subject to production test, calculated by RthJA and Rds(on)

Datasheet

2

Rev. 1.3, 2006-12-22

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