BTS118D 查看數據表（PDF） - Infineon Technologies
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BTS118D Datasheet PDF : 11 Pages
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Smart Low Side Power Switch
Power HITFET BTS 118D
Electrical Characteristics
Parameter
at Tj = 25°C, unless otherwise specified
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Turn-on time VIN to 90% ID:
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time VIN to 10% ID:
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
ton
-
toff
-
-dVDS/dton
-
dVDS/dtoff
-
40 100 µs
70 100
0.4 1.5 V/µs
0.6 1.5
Protection Functions1)
Thermal overload trip temperature
Thermal hysteresis 2)
Input current protection mode
Tj = 150 °C
Unclamped single pulse inductive energy 2)
ID = 2.2 A, Tj = 25 °C, Vbb = 12 V
Tjt
DTjt
IIN(Prot)
EAS
150 175
- °C
-
10
-K
-
100 300 µA
2
-
-J
Inverse Diode
Inverse diode forward voltage
IF = 10.9 A, tm = 250 µs, VIN = 0 V,
tP = 300 µs
VSD
-
1.0 1.5 V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
Datasheet
4
Rev. 1.3, 2006-12-22
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