DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

Q67060-S6072-A101 查看數據表(PDF) - Infineon Technologies

零件编号
产品描述 (功能)
生产厂家
Q67060-S6072-A101
Infineon
Infineon Technologies Infineon
Q67060-S6072-A101 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Data sheet BTS 6133 D
Input circuit (ESD protection)
V bb
V
ZD
Z,IN
V bIN
IN
IIN
R bb
V IN
ESD-Zener diode: 67 V typ., max 15 mA;
Inductive and overvoltage output clamp
+ Vbb
VZ1
V ON
OUT
PROFET
VON is clamped to VON(Cl) = 42 V typ
Overvoltage protection of logic part
Current sense output
Normal operation
Vbb Rbb
IIS,fault
ZD
V
Z,IS
IS
IIS
R IS
VIS
VZ,IS = 67 V (typ.), RIS = 1 knominal (or 1 k/n, if n
devices are connected in parallel). IS = IL/kilis can be
only driven by the internal circuit as long as
Vout - VIS > 5V. Therefore RIS should be less than
Vbb 5V
7.5mA
.
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
R IN
IN
VZ,IN VZ,IS
R bb
+ Vbb
Logic
IS
PROFET
VOUT
R IS
RV
V Z,VIS
Signal GND
Rbb = 100 typ., VZ,IN = VZ,IS = 67 V typ., RIS = 1 k
nominal. Note that when overvoltage exceeds 67 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
Infineon Technologies AG
Page 9 of 15
2002-08-07

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]