BUZ356 查看數據表（PDF） - Siemens AG
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BUZ356 Datasheet PDF : 9 Pages
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BUZ 356
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
12
A
Ptot
=
125W k
lj
i
h
g
f
e
10
ID
9
8
7
6
5
4
3
2
VGS [V]
a 4.0
d b 4.5
c 5.0
d 5.5
e 6.0
f 6.5
c g 7.0
h 7.5
i 8.0
j 9.0
k 10.0
l 20.0
b
1
a
0
0
10 20 30 40 50 V 65
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
16
A
ID
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
6.5
Ω
5.5
RDS (on) 5.0
a
b
4.5
4.0
3.5
3.0
c
2.5
d
e
2.0
gf
ih
1.5
j
1.0 VGS [V] =
0.5
abcdef
45.05 5.5 6.0 6.5 7.0 7.5
0.0
ghi j
8.0 9.0 10.0 20.0
0 1 2 3 4 5 6 7 8 A 10
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
10
S
gfs
8
7
6
5
4
3
2
1
0
0
2
4
6
8
A
12
ID
Semiconductor Group
6
07/96
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