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零件编号
产品描述 (功能)
BUZ350 查看數據表(PDF) - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
BUZ350
SIPMOS ® Power Transistor
Infineon Technologies
BUZ350 Datasheet PDF : 8 Pages
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2
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5
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7
8
BUZ 350
Power dissipation
P
tot
=
ƒ
(
T
C
)
130
W
110
P
tot
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 ˚C 160
T
C
Safe operating area
I
D
=
ƒ
(
V
DS
)
parameter:
D
= 0.01
, T
C
= 25˚C
10
3
A
I
D
10
2
10
1
/
I
D
=
V
DS
R
DS(on)
t
p
= 17.0µs
100 µs
1 ms
10
0
10 ms
DC
Drain current
I
D
=
ƒ
(
T
C
)
parameter:
V
GS
≥
10 V
24
A
20
I
D
18
16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 ˚C 160
T
C
Transient thermal impedance
Z
th JC
=
ƒ
(
t
p
)
parameter:
D = t
p
/
T
10
1
K/W
Z
thJC
10
0
10
-1
10
-2
10
-3
10
-4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-1
10
0
10
1
10
2
V
V
DS
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
p
Data Sheet
5
05.99
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