BYW51 查看數據表（PDF） - STMicroelectronics
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BYW51 Datasheet PDF : 9 Pages
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BYW51/F/G/FP/R-200
Fig. 9: Peak reverse recovery current versus dIF/dt
(per diode).
Fig. 10: Dynamic parameters versus junction
temperature.
IRM(A)
50
IF=IF(av)
90% confidence
Tj=125°C
10
1
10
20
dIF/dt(A/µs)
50
100
200
Qrr;IRM [Tj] / Qrr;IRM [Tj=125°C]
1.25
1.00
0.75
0.50
0.25
500
0
IRM
Qrr
Tj(°C)
25
50
75
100 125 150
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm)
(D2PAK) .
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
S(Cu) (cm²)
0
0
5 10 15 20 25 30 35 40
5/9
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