Philips Semiconductors
9-fold ESD transient voltage suppressor
Product specification
BZA109
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
one or more diodes loaded
VALUE UNIT
100
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per diode
VZ
VF
VZSM
IH
rdif
SZ
working voltage
forward voltage
non-repetitive peak reverse voltage
input high current
differential resistance
temperature coefficient of
working voltage
Cd
diode capacitance
IZ = 250 µA
IF = 100 mA
IZSM = 2.5 A; tp = 1 ms
VIN = 5.25 V
IZ = 250 µA
IZ = 5 mA
see Fig.5
VR = 0; f = 1 MHz
VR = 5.25 V; f = 1 MHz
MIN.
6.4
−
−
−
−
−
−
−
TYP.
6.8
−
−
−
−
3
−
−
MAX. UNIT
7.2
V
1.1
V
10
V
0.5
µA
100
Ω
−
mV/K
200
pF
100
pF
1997 Dec 01
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