M48Z32V-35MT1E(2007) 查看數據表（PDF） - STMicroelectronics

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M48Z32V-35MT1E
(Rev.:2007)

3.3V, 256Kbit (32Kbit x 8) ZEROPOWER® SRAM

STMicroelectronics 

DC and AC parameters

M48Z32V

Table 9.

Sym

DC characteristics

Parameter

Test condition(1)

Min Typ

ILI Input leakage current

ILO(2) Output leakage current

0V ≤ VIN ≤ VCC

0V ≤ VOUT ≤ VCC

IBAT Battery current

TA = 40°C; VCC = 0V

0.2

VBAT = 3V

ICC1 Supply current

IO = 0mA; Cycle Time = Min

E = 0.2V, other input =

VCC – 2V or 0.2V

ICC2 Supply current (TTL standby)

E = VIH

ICC3 Supply current (CMOS standby)

VIL(3) Input low voltage

E = VCC – 0.2V

–0.3

VIH Input high voltage

2.2

VOL Output low voltage

IOL = 2.1mA

VOH Output high voltage

IOH = –1mA

0.8VCC

1. Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 3.0 to 3.6V (except where noted).

2. Outputs deselected.

3. Negative spikes of –1V allowed for up to 10ns once per cycle.

Max

±1

±1

1.2

45

800

500

0.8

VCC + 0.3

0.4

Unit

µA

µA

µA

mA

µA

µA

V

V

V

V

Table 10. Power down/up mode AC waveforms

VCC

VPFD (max)

VPFD (min)

VSO

tF

tFB

tPD

INPUTS

RECOGNIZED

OUTPUTS

VALID

(PER CONTROL INPUT)

tRB

tDR

DON'T CARE

HIGH-Z

tR

tREC

RECOGNIZED

VALID

(PER CONTROL INPUT)

AI01168C

14/19

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