M48Z32V-35MT1(2007) 查看數據表（PDF） - STMicroelectronics

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M48Z32V-35MT1
(Rev.:2007)

3.3V, 256Kbit (32Kbit x 8) ZEROPOWER® SRAM

STMicroelectronics 

M48Z32V

DC and AC parameters

Table 11. Power down/up AC characteristics

Symbol

Parameter(1)

Min

Max

Unit

tPD E or W at VIH before power down

0

µs

tF(2) VPFD (max) to VPFD (min) VCC fall time

300

µs

tFB(3) VPFD (min) to VSS VCC fall time

10

µs

tR

VPFD (min) to VPFD (max) VCC rise time

10

µs

tRB VSS to VPFD (min) VCC rise time

tREC(4) VPFD (max) to inputs recognized

1

µs

40

200

ms

1. Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 3.0 to 3.6V (except where noted).

2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring

until 200µs after VCC passes VPFD (min).

3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

4. tREC (min) = 20ms for industrial temperature Grade (6) device.

Table 12. Power down/up trip points DC characteristics

Symbol

Parameter(1)(2)

Min

Typ

Max Unit

VPFD Power-fail deselect voltage

2.7

2.85

3.0

V

VSO Battery back-up switchover voltage

VPFD – 100mV

V

1. All voltages referenced to VSS.

2. Valid for ambient operating temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 3.0 to 3.6V (except where

noted).

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