CED3070 查看數據表（PDF） - Chino-Excel Technology

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CED3070

N-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology 

CED3070/CEU3070

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Test Condition

Min Typ Max Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics b

BVDSS

VGS = 0V, ID = 250µA

30

IDSS

VDS = 30V, VGS = 0V

IGSSF

VGS = 20V, VDS = 0V

IGSSR

VGS = -20V, VDS = 0V

V

1

µA

100 nA

-100 nA

6

Gate Threshold Voltage

Static Drain-Source

On-Resistance

VGS(th)

RDS(on)

VGS = VDS, ID = 250µA

1

VGS = 10V, ID = 30A

3

V

7.8 9.5 mΩ

VGS = 4.5V, ID = 24A

10.5 13.5 mΩ

Forward Transconductance

Dynamic Characteristics c

gFS

VDS = 10V, ID = 30A

23

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics c

Ciss

Coss

VDS = 15V, VGS = 0V,

f = 1.0 MHz

2110

400

pF

pF

Crss

250

pF

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

td(on)

tr

td(off)

VDD = 15V, ID = 45A,

VGS = 10V, RGEN = 24Ω

Turn-Off Fall Time

tf

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

VDS = 15V, ID = 45A,

VGS = 10V

Qgd

Drain-Source Diode Characteristics and Maximun Ratings

16

32

ns

21

42

ns

151 260 ns

74 148 ns

33.2 45.6 nC

5.2

nC

8.7

nC

Drain-Source Diode Forward Current

IS

Drain-Source Diode Forward Voltage b

VSD

VGS = 0V, IS = 30A

30

A

1.2

V

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

2

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