GS8170DW18C-250I 查看數據表（PDF） - Giga Semiconductor

零件编号

产品描述 (功能)

生产厂家

GS8170DW18C-250I

18Mb Σ1x1 Double Late Write SigmaRAM™ SRAM

Giga Semiconductor 

Preliminary

GS8170DW18/36/72C-333/300/250

CMOS I/O DC Input Characteristics

Parameter

Symbol

Min.

Typ.

Max.

CMOS Input High Voltage

VIH

0.65 * VDDI

—

VDDI+ 0.3

CMOS I/O Input High Voltage

VIH

0.65 * VDDI

—

VDDI+ 0.3

CMOS Input Low Voltage

VIL

–0.3

—

0.35 * VDDI

Note: For devices supplied with CMOS input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.

Unit Notes

V

1

V

1

V

1

Undershoot Measurement and Timing

VIH

VSS

50%

VSS – 1.0 V

20% tKC

Overshoot Measurement and Timing

VDD + 1.0 V

50%

20% tKC

VDD

VIL

Capacitance

(TA = 25oC, f = 1 MHZ, VDD = 1.8 V)

Parameter

Symbol

Input Capacitance

CIN

Output Capacitance

Note: This parameter is sample tested.

COUT

Test conditions

VIN = 0 V

VOUT = 0 V

Typ. Max. Unit

4

5

pF

6

7

pF

Package Thermal Characteristics

Rating

Layer Board Symbol

Max

Unit Notes

Junction to Ambient (at 200 lfm)

single

RΘJA

TBD

°C/W

1,2

Junction to Ambient (at 200 lfm)

four

RΘJA

TBD

°C/W

1,2

Junction to Case (TOP)

n/a

RΘJC

TBD

°C/W

3

Notes:

1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient.

Temperature air flow, board density, and PCB thermal resistance.

2. SCMI G-38-87

3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1

Rev: 1.00d 6/2002

21/36

© 2002, Giga Semiconductor, Inc.

Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.

Share Link: