CMPD2005S(2003) 查看數據表（PDF） - Central Semiconductor

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CMPD2005S
(Rev.:2003)

SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES

Central Semiconductor 

CMPD2005S

SURFACE MOUNT

DUAL, IN SERIES

HIGH VOLTAGE

SILICON SWITCHING DIODES

CentralTM

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CMPD2005S contains two (2) High Voltage

Silicon Switching Diodes, manufactured by the

epitaxial planar process, epoxy molded in a

SOT-23 surface mount package, designed for

applications requiring high voltage capability.

MARKING CODE: DB5

SOT-23 CASE

MAXIMUM RATINGS (TA=25 °C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Peak Repetitive Reverse Current

Continuous Forward Current

Peak Repetitive Forward Current

Forward Surge Current, tp= 1 µs

Forward Surge Current, tp= 1s

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

SYMBOL

VR

VRRM

IO

IF

IFRM

IFSM

IFSM

PD

TJ,Tstg

ΘJA

300

350

200

225

625

4.0

1.0

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN TYP MAX

IR

VR=280V

100

IR

VR=280V, TA=150°C

100

BVR

IR=100µA

350

VF

IF=20mA

0.87

VF

IF=100mA

1.0

VF

IF=200mA

1.25

CT

VR=0, f=1.0 MHz

5.0

trr

IR=IF=30mA, Rec. to 3.0mA, RL=100Ω

50

UNITS

V

V

mA

mA

mA

A

A

mW

°C

°C/W

UNITS

nA

µA

V

V

V

V

pF

ns

R1 (6-August 2003)

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